EU RoHS |
Compliant with Exemption |
ECCN (US) |
EAR99 |
Part Status |
Active |
HTS |
8541.29.00.95 |
SVHC |
Yes |
SVHC Exceeds Threshold |
Yes |
Product Category |
Power MOSFET |
Material |
Si |
Configuration |
Single |
Process Technology |
HEXFET |
Channel Mode |
Enhancement |
Channel Type |
N |
Number of Elements per Chip |
1 |
Maximum Drain Source Voltage (V) |
100 |
Maximum Gate Source Voltage (V) |
±16 |
Maximum Continuous Drain Current (A) |
17 |
Maximum Drain Source Resistance (mOhm) |
105@10V |
Typical Gate Charge @ Vgs (nC) |
34(Max)@5V |
Typical Input Capacitance @ Vds (pF) |
800@25V |
Maximum Power Dissipation (mW) |
79000 |
Typical Fall Time (ns) |
26 |
Typical Rise Time (ns) |
53 |
Typical Turn-Off Delay Time (ns) |
30 |
Typical Turn-On Delay Time (ns) |
7.2 |
Minimum Operating Temperature (°C) |
-55 |
Maximum Operating Temperature (°C) |
175 |
Packaging |
Tape and Reel |
Pin Count |
3 |
Standard Package Name |
TO-252 |
Supplier Package |
DPAK |
Mounting |
Surface Mount |
Package Height |
2.39(Max) |
Package Length |
6.73(Max) |
Package Width |
6.22(Max) |
PCB changed |
2 |
Tab |
Tab |