EU RoHS |
Compliant |
ECCN (US) |
EAR99 |
Part Status |
Active |
HTS |
8541.10.00.80 |
Product Category |
Power MOSFET |
Configuration |
Single |
Process Technology |
HEXFET |
Channel Mode |
Enhancement |
Channel Type |
P |
Number of Elements per Chip |
1 |
Maximum Drain Source Voltage (V) |
100 |
Maximum Gate Source Voltage (V) |
±20 |
Maximum Continuous Drain Current (A) |
19 |
Maximum Drain Source Resistance (mOhm) |
200@10V |
Typical Gate Charge @ Vgs (nC) |
61(Max)@10V |
Typical Gate Charge @ 10V (nC) |
61(Max) |
Typical Input Capacitance @ Vds (pF) |
1400@25V |
Maximum Power Dissipation (mW) |
150000 |
Typical Fall Time (ns) |
57 |
Typical Rise Time (ns) |
73 |
Typical Turn-Off Delay Time (ns) |
34 |
Typical Turn-On Delay Time (ns) |
16 |
Minimum Operating Temperature (°C) |
-55 |
Maximum Operating Temperature (°C) |
175 |
Supplier Package |
TO-220AB |
Pin Count |
3 |
Standard Package Name |
TO-220 |
Mounting |
Through Hole |
Package Height |
9.01(Max) |
Package Length |
10.41(Max) |
Package Width |
4.7(Max) |
PCB changed |
3 |
Tab |
Tab |
Lead Shape |
Through Hole |