| EU RoHS |
Compliant |
| ECCN (US) |
EAR99 |
| Part Status |
Active |
| HTS |
8541.29.00.95 |
| Product Category |
Power MOSFET |
| Process Technology |
HEXFET |
| Configuration |
Dual Dual Drain |
| Channel Mode |
Enhancement |
| Channel Type |
N|P |
| Number of Elements per Chip |
2 |
| Maximum Drain Source Voltage (V) |
25 |
| Maximum Gate Source Voltage (V) |
±20 |
| Maximum Continuous Drain Current (A) |
3.5@N Channel|2.3@P Channel |
| Maximum Drain Source Resistance (mOhm) |
100@10V@N Channel|250@10V@P Channel |
| Typical Gate Charge @ Vgs (nC) |
9.4@10V@N Channel|10@10V@P Channel |
| Typical Gate Charge @ 10V (nC) |
9.4@N Channel|10@P Channel |
| Typical Input Capacitance @ Vds (pF) |
330@15V@N Channel|290@15V@P Channel |
| Maximum Power Dissipation (mW) |
2000 |
| Typical Fall Time (ns) |
25@N Channel|37@P Channel |
| Typical Rise Time (ns) |
9@N Channel|13@P Channel |
| Typical Turn-Off Delay Time (ns) |
45 |
| Typical Turn-On Delay Time (ns) |
7@N Channel|12@P Channel |
| Minimum Operating Temperature (°C) |
-55 |
| Maximum Operating Temperature (°C) |
150 |
| Packaging |
Tape and Reel |
| Supplier Package |
SOIC |
| Pin Count |
8 |
| Standard Package Name |
SOP |
| Mounting |
Surface Mount |
| Package Height |
1.5(Max) |
| Package Length |
5(Max) |
| Package Width |
4(Max) |
| PCB changed |
8 |
| Lead Shape |
Gull-wing |
