|
EU RoHS |
Compliant
|
|
ECCN (US) |
EAR99 |
|
Part Status |
Active |
|
HTS |
8541.29.00.95 |
|
Automotive |
No |
|
PPAP |
No |
|
Product Category |
Small Signal |
|
Configuration |
Single |
|
Process Technology |
DMOS |
|
Channel Mode |
Enhancement |
|
Channel Type |
N |
|
Number of Elements per Chip |
1 |
|
Maximum Drain Source Voltage (V) |
60 |
|
Maximum Gate Source Voltage (V) |
±20 |
|
Maximum Gate Threshold Voltage (V) |
2.5 |
|
Operating Junction Temperature (°C) |
-65 to 150 |
|
Maximum Continuous Drain Current (A) |
0.28 |
|
Maximum Gate Source Leakage Current (nA) |
100 |
|
Maximum IDSS (uA) |
1 |
|
Maximum Drain Source Resistance (mOhm) |
2000@10V |
|
Typical Input Capacitance @ Vds (pF) |
20@25V |
|
Typical Reverse Transfer Capacitance @ Vds (pF) |
4@25V |
|
Minimum Gate Threshold Voltage (V) |
1 |
|
Typical Output Capacitance (pF) |
11 |
|
Maximum Power Dissipation (mW) |
300 |
|
Minimum Operating Temperature (°C) |
-65 |
|
Maximum Operating Temperature (°C) |
150 |
|
Packaging |
Tape and Reel |
|
Maximum Positive Gate Source Voltage (V) |
20 |
|
Maximum Pulsed Drain Current @ TC=25°C (A) |
1.5 |
|
Typical Diode Forward Voltage (V) |
0.88 |
|
Typical Gate Plateau Voltage (V) |
4.5 |
|
Maximum Diode Forward Voltage (V) |
1.2 |
|
Typical Gate Threshold Voltage (V) |
2.1 |
|
Pin Count |
3 |
|
Standard Package Name |
SOT |
